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BPF-660(T) Installation, Operation and Maintenance Procedures Install the ring into the cut-out hole turning the crews connected to the three hooks, screw clockwise until the ring is fixed to the ceiling. Open box by one screw, lead cable through cable gland, connect to terminal (70V or 100V) and select required N­Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Features D Integrated gate protection diodes D High cross modulation performance D Low noise figure D High AGC-range D Low feedback capacitance D Low input capacitance Hamradioindia website with radio theory, regulations and homebrewing projects by VU2FD

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July 2006 BF494 NPN RF Transistor TO-92 Absolute Maximum Ratings * Ta = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. BF660 Datasheet, BF660 PDF, BF660 Data sheet, BF660 manual, BF660 pdf, BF660, datenblatt, Electronics BF660, alldatasheet, free, datasheet, Datasheets, data sheet ... IRFH7545PbF 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 Absolute Maximum Rating

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BF3016 Datasheet BF3016 Datasheet WI-D06-J-0236 Rev.A/0 Page 3 of 26 BYD Microelectronics Co., Ltd. 1. General Description The BF3016 is a 1/4-inch 720P HD CMOS Image Sensor which includes CMOS image sensor (CIS), Sensor control. BF3016 Datasheet BF3016 Datasheet WI-D06-J-0236 Rev.A/0 Page 3 of 26 BYD Microelectronics Co., Ltd. 1. General Description The BF3016 is a 1/4-inch 720P HD CMOS Image Sensor which includes CMOS image sensor (CIS), Sensor control.

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July 2006 BF494 NPN RF Transistor TO-92 Absolute Maximum Ratings * Ta = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits.

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BF197 silicon NPN transistor,Download BF197 datasheet. BF197 silicon NPN transistor in a SOT-25 case. 40V / 25MA / 550MHz / 0.5W BF258 datasheet, cross reference, circuit and application notes in pdf format. The Datasheet Archive. Search. Recent Listings Manufacturer Directory Get instant ... PEG-15 oleate. Radiasurf® 7404 by Olean Sofiproteol Group acts as a non-ionic surfactant and emulsifier for o/w emulsions. It is non-toxic, non-irritating, non-exhaustive, fully biodegradable and environment friendly in nature. It is an electrolyte tolerant, high molecular weight member and is used as viscosity builder in detergent systems.

BF494B BF494; BF495; NPN Medium Frequency Transistors . Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 08. FEATURES Low current (max. 30 mA) Low voltage (max. 20 V). APPLICATIONS HF applications in radio and television receivers FM tuners The connectors listed in the datasheets are for reference only and it is not a part of the contract. The connector we use for the customer’s order is not limited to the types listed in the datasheet, which is subject to change without prior notice. The installers need to use the same connector type to PV system. ELECTRICAL SPECIFICATIONS (STC) (2) All filed forms must be legible for both the commissioner's review and retention as a public record. Filers must submit new or revised forms to the commissioner for review in final form displayed in ten-point or larger type.

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PNP Silicon RF Transistor (For VHF oscillator applications), BF660 datasheet, BF660 circuit, BF660 data sheet : SIEMENS, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION BF197 silicon NPN transistor,Download BF197 datasheet. BF197 silicon NPN transistor in a SOT-25 case. 40V / 25MA / 550MHz / 0.5W BF014E0104K-- from AVX Corporation. Find the PDF Datasheet, Specifications and Distributor Information. MMBT5551M3 NPN High Voltage Transistor The MMBT5551M3 device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose high voltage applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. Features

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BF660 Datasheet, BF660 PDF, BF660 Data sheet, BF660 manual, BF660 pdf, BF660, datenblatt, Electronics BF660, alldatasheet, free, datasheet, Datasheets, data sheet ... www.vishay.com

Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION www.vishay.com